bat 64-07 oct-07-1999 1 silicon schottky diodes ? for low-loss, fast-recovery, meter protection, bias isolation and clamping applications ? integrated diffused guard ring ? low forward voltage vps05178 2 1 3 4 32 eha07008 1 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! marking pin configuration package type bat 64-07 67s 1 = c1 2 = c2 3 = a2 4 = a1 sot-143 maximum ratings parameter symbol value unit diode reverse voltage v r 40 v forward current i f 250 ma average forward current (50/60hz, sinus) i fav 120 surge forward current (t < 10ms) i fsm 800 total power dissipation , t s = 61 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 maximum ratings junction - ambient 1) r thja 495 k/w junction - soldering point r thjs 355 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bat 64-07 oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 25 v i r - - 2 a reverse current v r = 25 v, t a = 150 c - i r - 200 a forward voltage i f = 1 ma i f = 10 ma i f = 30 ma i f = 100 ma v f - - - - 320 385 440 570 350 430 520 750 mv ac characteristics diode capacitance v r = 1 v, f = 1 mhz c t - 4 6 pf
bat 64-07 oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00153 bat 64... f a t ; t s 50 100 ?c 150 t a s t 100 200 ma 300 reverse current i r = f ( v r ) t a = parameter 10 10 10 0102030 bat 64... ehb00058 v r r v 10 a 10 10 a t = 125 85 25 2 1 0 -1 -2 -3 c c c forward current i f = f ( v f ) t a = parameter 10 10 10 0 0.5 1 bat 64... ehb00057 v f f v 10 10 2 1 0 -1 -2 ma a t = -40 25 85 125 c c c c diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehb00059 bat 64... c v r t 10 20 v 30 1 2 3 4 5 6 7 8 pf 10
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